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Diamond is a wide bandgap semiconductor possessing unique properties for applications in quantum systems and ultra-wide bandgap electronics, which require a fundamental understanding of processing of high-quality diamond crystals and textured films by microwave plasma-enhanced chemical vapor deposition (MPECVD). The approach of bias-enhanced nucleation (BEN) followed by growth is studied for the processing of oriented diamond film with azimuthal texture. The magnitude of the applied electric field is shown to play an important role in the processing of the highly azimuthally textured diamond film on Si (100) substrate. The X-ray diffraction pole figure, scanning electron microscopy, and Raman spectroscopy results show that an optimum applied electric field during BEN and microwave plasma conditions leads to the formation of diamond film with azimuthal texture upon growth by MPECVD. These results are promising for fabricating diamond films of optimum characteristics containing nitrogen-vacancy (NV) defect centers for application in quantum devices.